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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz

Romanczyk, B.; Guidry, M.; Wienecke, S.; Li, H.; Ahmadi, E.; Zheng, X.; Keller, S.; Mishra, U. K.
  • 作者Romanczyk, B.; Guidry, M.; Wienecke, S.; Li, H.; Ahmadi, E.; Zheng, X.; Keller, S.; Mishra, U. K.
  • 文件大小1005.86KB
  • 发表时间2016
  • DOI10.1109/IEDM.2016.7838339
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