Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

Emtsev, V. V.; Zavarin, E. E.; Kozlovskii, M. A.; Kudoyarov, M. F.; Lundin, V. V.; Oganesyan, G. A.; Petrov, V. N.; Poloskin, D. S.; Sakharov, A. V.; Troshkov, S. I.; Shmidt, N. M.; V’yuginov, V. N.; Zybin, A. A.; Parnes, Ya. M.; Vidyakin, S. I.; Gudkov, A. G.; Chernyakov, A. E.; Kozlovskii, V. V.

期刊名称Technical Physics Letters
作者Emtsev, V. V.; Zavarin, E. E.; Kozlovskii, M. A.; Kudoyarov, M. F.; Lundin, V. V.; Oganesyan, G. A.; Petrov, V. N.; Poloskin, D. S.; Sakharov, A. V.; Troshkov, S. I.; Shmidt, N. M.; V’yuginov, V. N.; Zybin, A. A.; Parnes, Ya. M.; Vidyakin, S. I.; Gudkov, A. G.; Chernyakov, A. E.; Kozlovskii, V. V.
卷第42卷
期第11期
印刷ISSN1063-7850
电子ISSN1090-6533
文件大小479.81KB
发表时间2016-11
DOI10.1134/s1063785016110031
页码1079-1082

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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel