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[IEEE 2016 9th International Conference on Electrical and Computer Engineering (ICECE) - Dhaka, Bangladesh (2016.12.20-2016.12.22)] 2016 9th International Conference on Electrical and Computer Engineering (ICECE) - On the staircase like structures in gate C-V characteristics of InSb/In<inf>0.8</inf>Al<inf>0.2</inf>Sb MOS-HEMT devices

[IEEE 2016 9th International Conference on Electrical and Computer Engineering (ICECE) - Dhaka, Bangladesh (2016.12.20-2016.12.22)] 2016 9th International Conference on Electrical and Computer Engineering (ICECE) - On the staircase like structures in gate C-V characteristics of InSb/In0.8Al0.2Sb MOS-HEMT devices

Mim, Nugaira Gahan; Haque, Anisul
  • 作者Mim, Nugaira Gahan; Haque, Anisul
  • 文件大小278.85KB
  • 发表时间2016
  • DOI10.1109/ICECE.2016.7853881
  • 页码163-165
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