InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure
Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
- 期刊名称Applied Physics Letters
- 作者Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
- 卷第109卷
- 期第21期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小2084.85KB
- 发表时间2016-11-21
- DOI10.1063/1.4968187