[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May
- 作者Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May
- 文件大小742.48KB
- 发表时间2016
- DOI10.1109/iciprm.2016.7528765
- 页码1-2