[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A vertical and junctionless channel with T-shaped gate 1T-DRAM using new operate mechanism
Cyuan-You Yu, ; Jyi Tsong Lin, ; Ting-Chung Chang, ; Chih-Chia Lin, ; Chih-Kai Haung, ; Kranti, Abhinav
- 作者Cyuan-You Yu, ; Jyi Tsong Lin, ; Ting-Chung Chang, ; Chih-Chia Lin, ; Chih-Kai Haung, ; Kranti, Abhinav
- 文件大小848.01KB
- 发表时间2016
- DOI10.1109/ICSICT.2016.7999063
- 页码863-865