[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Reduction of junction leakage current in Sub-10 nm ultra-shallow NiGe/n-Ge Schottky junctions by dopant segregation
Zhang, Rui; Yi Wang, ; Li, Junkang; Chen, Feng; Zhao, Yi
- 作者Zhang, Rui; Yi Wang, ; Li, Junkang; Chen, Feng; Zhao, Yi
- 文件大小662.05KB
- 发表时间2016
- DOI10.1109/ICSICT.2016.7998902
- 页码297-299