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Oxide trap states versus gas sensing in SiC-MOS capacitors – The effect of N- and P- based post oxidation processes

Oxide trap states versus gas sensing in SiC-MOS capacitors – The effect of N- and P- based post oxidation processes

Pascu, Razvan; Craciunoiu, Florea; Pristavu, Gheorghe; Brezeanu, Gheorghe; Kusko, Mihaela
  • 期刊名称Sensors and Actuators B: Chemical
  • 作者Pascu, Razvan; Craciunoiu, Florea; Pristavu, Gheorghe; Brezeanu, Gheorghe; Kusko, Mihaela
  • 卷第245卷
  • 印刷ISSN0925-4005
  • 文件大小1451.49KB
  • 发表时间2017-06
  • DOI10.1016/j.snb.2017.02.044
  • 页码911-922
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