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Thermodynamic understanding and analytical modeling of interfacial SiO
<sub/>2</sub>
scavenging in HfO
<sub/>2</sub>
gate stacks on Si, SiGe, and SiC

Thermodynamic understanding and analytical modeling of interfacial SiO ₂ scavenging in HfO ₂ gate stacks on Si, SiGe, and SiC

Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

期刊名称Applied Physics Letters
作者Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira
卷第110卷
期第14期
印刷ISSN0003-6951
电子ISSN1077-3118
文件大小1597.81KB
发表时间2017-04-03
DOI10.1063/1.4979711

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