3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

Shima, Akio; Shimizu, Haruka; Mori, Yuki; Sagawa, Masakazu; Konishi, Kumiko; Fujita, Ryusei; Ishigaki, Takashi; Tega, Naoki; Kobayashi, Keisuke; Sato, Shintaroh; Shimamoto, Yasuhiro

期刊名称Materials Science Forum
作者Shima, Akio; Shimizu, Haruka; Mori, Yuki; Sagawa, Masakazu; Konishi, Kumiko; Fujita, Ryusei; Ishigaki, Takashi; Tega, Naoki; Kobayashi, Keisuke; Sato, Shintaroh; Shimamoto, Yasuhiro
卷第897卷
电子ISSN1662-9752
文件大小967.34KB
发表时间2017-5
DOI10.4028/www.scientific.net/msf.897.493
页码493-496

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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode