$Resistive switching characteristics of Al<formula><tex>$_{2}$</tex></formula>O<formula><tex>$_{3}$</tex></formula> film for transparent nonvolatile memory$

Resistive switching characteristics of Al$_{2}$O$_{3}$ film for transparent nonvolatile memory

Kim, Myeongcheol; Choi, Kyung Cheol

期刊名称IEEE Transactions on Nanotechnology
作者Kim, Myeongcheol; Choi, Kyung Cheol
印刷ISSN1536-125X
电子ISSN1941-0085
文件大小283.83KB
发表时间2017
DOI10.1109/TNANO.2017.2723421
页码1-1

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Resistive switching characteristics of Al$_{2}$O$_{3}$ film for transparent nonvolatile memory