[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Analysis of break-even time for nonvolatile SRAM with SOTB technology

• 作者Kitagata, Daiki; Shuto, Yusuke; Yamamoto, Shuu'ichirou; Sugahara, Satoshi
• 文件大小1432.70KB
• 发表时间2017
• DOI10.1109/EDTM.2017.7947511
• 页码72-74