MoS
<sub/>2</sub>
Functionalization with a Sub-nm Thin SiO
<sub/>2</sub>
Layer for Atomic Layer Deposition of High-κ Dielectrics

MoS ₂ Functionalization with a Sub-nm Thin SiO ₂ Layer for Atomic Layer Deposition of High-κ Dielectrics

Zhang, Haodong; Arutchelvan, Goutham; Meersschaut, Johan; Gaur, Abhinav; Conard, Thierry; Bender, Hugo; Lin, Dennis; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies

期刊名称Chemistry of Materials
作者Zhang, Haodong; Arutchelvan, Goutham; Meersschaut, Johan; Gaur, Abhinav; Conard, Thierry; Bender, Hugo; Lin, Dennis; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies
印刷ISSN0897-4756
电子ISSN1520-5002
文件大小1509.30KB
发表时间2017-07-28
DOI10.1021/acs.chemmater.7b01695

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MoS 2 Functionalization with a Sub-nm Thin SiO 2 Layer for Atomic Layer Deposition of High-κ Dielectrics

MoS ₂ Functionalization with a Sub-nm Thin SiO ₂ Layer for Atomic Layer Deposition of High-κ Dielectrics