Sub -60-mV/decade Negative Capacitance FinFET with Sub -10-nm Hafnium-Based Ferroelectric Capacitor
- 期刊名称IEEE Journal of the Electron Devices Society
- 作者Ko, Eunah; Lee, Hyunjae; Goh, Youngin; Jeon, Sanghun; Shin, Changhwan; Shin, Changhwan
- 电子ISSN2168-6734
- 文件大小790.93KB
- 发表时间2017
- DOI10.1109/JEDS.2017.2731401
- 页码1-1
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