Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

• 期刊名称Journal of Physics D: Applied Physics
• 作者Dushaq, Ghada Hamed; Rasras, Mahmoud; Nayfeh, Ammar
• 印刷ISSN0022-3727
• 电子ISSN1361-6463
• 文件大小1024.77KB
• 发表时间2017-07-25
• DOI10.1088/1361-6463/aa81be