Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
Ueno, Kohei; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi
- 期刊名称Applied Physics Express
- 作者Ueno, Kohei; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi
- 卷第10卷
- 期第10期
- 印刷ISSN1882-0778
- 电子ISSN1882-0786
- 文件大小856.16KB
- 发表时间2017-10-01
- DOI10.7567/APEX.10.101002