Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation
- 期刊名称Advanced Materials
- 作者Polking, Mark J.; Dibos, Alan M.; de Leon, Nathalie P.; Park, Hongkun
- 印刷ISSN0935-9648
- 文件大小3457.00KB
- 发表时间2017-12-05
- DOI10.1002/adma.201704543
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