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Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Tanner, Philip; Iacopi, Alan; Phan, Hoang-Phuong; Dimitrijev, Sima; Hold, Leonie; Chaik, Kien; Walker, Glenn; Dao, Dzung Viet; Nguyen, Nam-Trung
  • 期刊名称Scientific Reports
  • 作者Tanner, Philip; Iacopi, Alan; Phan, Hoang-Phuong; Dimitrijev, Sima; Hold, Leonie; Chaik, Kien; Walker, Glenn; Dao, Dzung Viet; Nguyen, Nam-Trung
  • 卷第7卷
  • 期第1期
  • 电子ISSN2045-2322
  • 文件大小2403.96KB
  • 发表时间2017-12
  • DOI10.1038/s41598-017-17985-9
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