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[IEEE 2017 IEEE 30th International Conference on Microelectronics (MIEL) - Nis (2017.10.9-2017.10.11)] 2017 IEEE 30th International Conference on Microelectronics (MIEL) - A case study of C-V hysteresis instability in metal-high-k-oxide-silicon devices with ZrO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/Zr<inf>2</inf>O<inf>2</inf> stack as a charge trapping layer

[IEEE 2017 IEEE 30th International Conference on Microelectronics (MIEL) - Nis (2017.10.9-2017.10.11)] 2017 IEEE 30th International Conference on Microelectronics (MIEL) - A case study of C-V hysteresis instability in metal-high-k-oxide-silicon devices with ZrO2/Al2O3/Zr2O2 stack as a charge trapping layer

Skeparovski, A.; Spassov, D.; Paskaleva, A.; Novkovski, N.
  • 作者Skeparovski, A.; Spassov, D.; Paskaleva, A.; Novkovski, N.
  • 文件大小734.18KB
  • 发表时间2017
  • DOI10.1109/miel.2017.8190073
  • 页码79-82
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