[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

Hu, G.; Gottwald, M. G.; He, Q.; Park, J. H.; Lauer, G.; Nowak, J. J.; Brown, S. L.; Doris, B.; Edelstein, D.; Evarts, E. R.; Hashemi, P.; Khan, B.; Kim, Y. H.; Kothandaraman, C.; Marchack, N.; O'Sullivan, E. J.; Reuter, M.; Robertazzi, R. P.; Sun, J. Z.; Suwannasiri, T.; Trouilloud, P. L.; Zhu, Y.; Worledge, D. C.

作者Hu, G.; Gottwald, M. G.; He, Q.; Park, J. H.; Lauer, G.; Nowak, J. J.; Brown, S. L.; Doris, B.; Edelstein, D.; Evarts, E. R.; Hashemi, P.; Khan, B.; Kim, Y. H.; Kothandaraman, C.; Marchack, N.; O'Sullivan, E. J.; Reuter, M.; Robertazzi, R. P.; Sun, J. Z.; Suwannasiri, T.; Trouilloud, P. L.; Zhu, Y.; Worledge, D. C.
文件大小772.78KB
发表时间2017
DOI10.1109/IEDM.2017.8268515

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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs