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[IEEE 2017 IEEE 12th International Conference on ASIC (ASICON) - Guiyang (2017.10.25-2017.10.28)] 2017 IEEE 12th International Conference on ASIC (ASICON) - Low frequency noise characteristics in p-Type MOSFET with multilayer WSe<inf>2</inf> channel and Al<inf>2</inf>O<inf>3</inf> back gate dielectric

[IEEE 2017 IEEE 12th International Conference on ASIC (ASICON) - Guiyang (2017.10.25-2017.10.28)] 2017 IEEE 12th International Conference on ASIC (ASICON) - Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric

Shen, Hui; Yuan, Huiwen; Bu, Sitong; He, Mingyue; Huang, Daming

作者Shen, Hui; Yuan, Huiwen; Bu, Sitong; He, Mingyue; Huang, Daming
文件大小541.55KB
发表时间2017
DOI10.1109/ASICON.2017.8252490
页码371-374

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