[IEEE 2017 IEEE 17th International Conference on Communication Technology (ICCT) - Chengdu, China (2017.10.27-2017.10.30)] 2017 IEEE 17th International Conference on Communication Technology (ICCT) - Research on hot carrier reliability of n-MOSFET in deep submicron technology
- 作者Shen, Jingyu; Zhang, Ming; Tan, Can; Fan, Xue; Li, Wei
- 文件大小460.07KB
- 发表时间2017
- DOI10.1109/ICCT.2017.8359935
- 页码1778-1781
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