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A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng
  • 卷第57卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小1443.41KB
  • 发表时间2018-04-01
  • DOI10.7567/JJAP.57.04FE02
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