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A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout

Yang, Kemeng; Guo, Yufeng; Pan, David Z.; Zhang, Jun; Li, Man; Tong, Yi; He, Lin; Yao, Jiafei

期刊名称IEEE Transactions on Electron Devices
作者Yang, Kemeng; Guo, Yufeng; Pan, David Z.; Zhang, Jun; Li, Man; Tong, Yi; He, Lin; Yao, Jiafei
卷第65卷
期第4期
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小3252.60KB
发表时间2018-4
DOI10.1109/TED.2018.2808193
页码1447-1452