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Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers

Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers

Pashchenko, A. S.; Lunin, L. S.; Chebotarev, S. N.; Lunina, M. L.

期刊名称Semiconductors
作者Pashchenko, A. S.; Lunin, L. S.; Chebotarev, S. N.; Lunina, M. L.
卷第52卷
期第6期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小619.72KB
发表时间2018-6
DOI10.1134/S1063782618060180
页码729-733

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