Comparative study on slow-state near interface hole traps in NO and Ar annealed N-type 4H-SiC MOS capacitors by ultraviolet light
Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng
- 期刊名称Journal of Materials Science: Materials in Electronics
- 作者Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng
- 卷第29卷
- 期第16期
- 印刷ISSN0957-4522
- 电子ISSN1573-482X
- 文件大小2445.02KB
- 发表时间2018-8
- DOI10.1007/s10854-018-9563-5
- 页码14292-14299