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Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET

Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET

Konishi, Kumiko; Fujita, Ryusei; Mori, Yuki; Shima, Akio

期刊名称Materials Science Forum
作者Konishi, Kumiko; Fujita, Ryusei; Mori, Yuki; Shima, Akio
卷第924卷
电子ISSN1662-9752
文件大小1400.54KB
发表时间2018-6
DOI10.4028/www.scientific.net/MSF.924.365
页码365-368

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