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Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer

Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer

Kim, Hogyoung; Cho, Yunae; Kim, Dong-Wook; Kim, Dong Ha; Kim, Yong; Choi, Byung Joon
  • 期刊名称Journal of the Korean Physical Society
  • 作者Kim, Hogyoung; Cho, Yunae; Kim, Dong-Wook; Kim, Dong Ha; Kim, Yong; Choi, Byung Joon
  • 卷第73卷
  • 期第3期
  • 印刷ISSN0374-4884
  • 电子ISSN1976-8524
  • 文件大小799.90KB
  • 发表时间2018-8
  • DOI10.3938/jkps.73.349
  • 页码349-354
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