A Full-Range Analytical Current Model for Heterojunction TFET With Dual Material Gate
- 期刊名称IEEE Transactions on Electron Devices
- 作者Guan, Yunhe; Li, Zunchao; Zhang, Wenhao; Zhang, Yefei; Liang, Feng
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1022.02KB
- 发表时间2018
- DOI10.1109/TED.2018.2870171
- 页码1-5