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Effect of short circuit aging on safe operating area of SiC MOSFET

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, Tien Anh; Lefebvre, Stéphane; Azzopardi, Stéphane

期刊名称Microelectronics Reliability
作者Nguyen, Tien Anh; Lefebvre, Stéphane; Azzopardi, Stéphane
印刷ISSN0026-2714
文件大小1673.17KB
发表时间2018-09
DOI10.1016/j.microrel.2018.06.040
页码645-651

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