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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 12 V Low-Ripple and High-Efficiency Charge Pump with Continuous Regulation Scheme for 3D NAND Flash Memories

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 12 V Low-Ripple and High-Efficiency Charge Pump with Continuous Regulation Scheme for 3D NAND Flash Memories

Wang, Qianqian; Liu, Fei; Huang, Cece; Fu, Liyin; Huo, Zongliang
  • 作者Wang, Qianqian; Liu, Fei; Huang, Cece; Fu, Liyin; Huo, Zongliang
  • 文件大小3432.14KB
  • 发表时间2018
  • DOI10.1109/ICSICT.2018.8564843
  • 页码1-3
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