Ferroelectric-Gated Nanoelectromechanical Nonvolatile Memory Cell
- 期刊名称IEEE Transactions on Electron Devices
- 作者Choe, Kihun; Shin, Changhwan
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小2437.01KB
- 发表时间2018
- DOI10.1109/TED.2018.2881201
- 页码1-6
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