[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures
Gui, Handong; Ren, Ren; Zhang, Zheyu; Chen, Ruirui; Niu, Jiahao; Wang, Fred; Tolbert, Leon M.; Blalock, Benjamin J.; Costinett, Daniel J.; Choi, Benjamin B.
- 作者Gui, Handong; Ren, Ren; Zhang, Zheyu; Chen, Ruirui; Niu, Jiahao; Wang, Fred; Tolbert, Leon M.; Blalock, Benjamin J.; Costinett, Daniel J.; Choi, Benjamin B.
- 文件大小7.79KB
- 发表时间2018
- DOI10.1109/ECCE.2018.8557442
- 页码7010-7015