Stacked Gate FinFET with Gate Extension for Improved Gate Control
- 期刊名称Russian Microelectronics
- 作者Sangeeta Mangesh, ; Chopra, Pradeep; Saini, Krishan
- 卷第47卷
- 期第6期
- 印刷ISSN1063-7397
- 电子ISSN1608-3415
- 文件大小495.63KB
- 发表时间2018-11
- DOI10.1134/S1063739718660010
- 页码443-448
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