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[IEEE 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Coimbatore (2018.3.16-2018.3.17)] 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Choice of Gate Insulator for Effective Gate Electrostatics in Double Gate Nanoscale Mosfet

[IEEE 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Coimbatore (2018.3.16-2018.3.17)] 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) - Choice of Gate Insulator for Effective Gate Electrostatics in Double Gate Nanoscale Mosfet

Thriveni, G.; Ghosh, Kaustab
  • 作者Thriveni, G.; Ghosh, Kaustab
  • 文件大小143.44KB
  • 发表时间2018
  • DOI10.1109/ICDCSyst.2018.8605073
  • 页码34-36
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