[IEEE 2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - Hyderabad, India (2018.12.17-2018.12.19)] 2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - A 40nm Low Power High Stable SRAM Cell Using Separate Read Port and Sleep Transistor Methodology
Mishra, Jitendra Kumar; Srivastava, Harshit; Misra, Prasanna Kumar; Goswami, Manish
- 作者Mishra, Jitendra Kumar; Srivastava, Harshit; Misra, Prasanna Kumar; Goswami, Manish
- 文件大小999.65KB
- 发表时间2018
- DOI10.1109/iSES.2018.00011
- 页码1-5