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[Lecture Notes in Electrical Engineering] Advances in Signal Processing and Communication Volume 526 (Select Proceedings of ICSC 2018) || Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer

[Lecture Notes in Electrical Engineering] Advances in Signal Processing and Communication Volume 526 (Select Proceedings of ICSC 2018) || Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer

Rawat, Banmali S.; Trivedi, Aditya; Manhas, Sanjeev; Karwal, Vikram

作者Rawat, Banmali S.; Trivedi, Aditya; Manhas, Sanjeev; Karwal, Vikram
文件大小480.39KB
发表时间2019
DOI10.1007/978-981-13-2553-3_55
页码565-571

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