Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon
Baghizadeh, A.; Lotfi, E.; Agha–Aligol, D.
- 期刊名称Vacuum
- 作者Baghizadeh, A.; Lotfi, E.; Agha–Aligol, D.
- 卷第160卷
- 印刷ISSN0042-207X
- 文件大小1596.49KB
- 发表时间2019-02
- DOI10.1016/j.vacuum.2018.11.045
- 页码311-315