Degradation Assessment and Precursor Identification for SiC MOSFETs under High Temp Cycling

• 期刊名称IEEE Transactions on Industry Applications
• 作者Ugur, Enes; Yang, Fei; Pu, Shi; Zhao, Shuai; Akin, Bilal
• 印刷ISSN0093-9994
• 电子ISSN1939-9367
• 文件大小6.35KB
• 发表时间2019
• DOI10.1109/TIA.2019.2891214
• 页码1-1