Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes

• 期刊名称IEEE Journal of the Electron Devices Society
• 作者Shurrab, Mohammed; Siddiqui, Amna; Singh, Shakti
• 电子ISSN2168-6734
• 文件大小1978.18KB
• 发表时间2019
• DOI10.1109/JEDS.2019.2896971
• 页码1-1