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3D analytical modeling and electrical characteristics analysis of gate-engineered SiO2/HfO2-stacked tri-gate TFET

3D analytical modeling and electrical characteristics analysis of gate-engineered SiO2/HfO2-stacked tri-gate TFET

Dash, Dinesh Kumar; Saha, Priyanka; Mahajan, Aman; Kumari, Tripty; Sarkar, Subir Kumar
  • 期刊名称Indian Journal of Physics
  • 作者Dash, Dinesh Kumar; Saha, Priyanka; Mahajan, Aman; Kumari, Tripty; Sarkar, Subir Kumar
  • 印刷ISSN0973-1458
  • 电子ISSN0974-9845
  • 文件大小2030.62KB
  • 发表时间2019-4-5
  • DOI10.1007/s12648-019-01446-2
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