DIBL improvement in hysteresis-free and ferroelectric-gated FinFETs
- 期刊名称Semiconductor Science and Technology
- 作者Shin, Jaemin; Shin, Changhwan
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小862.60KB
- 发表时间2019-03-27
- DOI10.1088/1361-6641/ab13fc
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