A Comparison Review of the Resonant Gate Driver in the Silicon MOSFET and the GaN Transistor Application
- 期刊名称IEEE Transactions on Industry Applications
- 作者Sun, Bainan; Zhang, Zhe; Andersen, Michael A.E.
- 印刷ISSN0093-9994
- 电子ISSN1939-9367
- 文件大小784.86KB
- 发表时间2019
- DOI10.1109/TIA.2019.2914193
- 页码1-1
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