Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C
Liu, Jiangwei; Ohsato, Hirotaka; Da, Bo; Teraji, Tokuyuki; Kobayashi, Atsushi; Fujioka, Hiroshi; Koide, Yasuo
- 期刊名称Journal of Physics D: Applied Physics
- 作者Liu, Jiangwei; Ohsato, Hirotaka; Da, Bo; Teraji, Tokuyuki; Kobayashi, Atsushi; Fujioka, Hiroshi; Koide, Yasuo
- 印刷ISSN0022-3727
- 电子ISSN1361-6463
- 文件大小1071.19KB
- 发表时间2019-04-30
- DOI10.1088/1361-6463/ab1e31