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$Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier$

Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier

Sinha, Krishnpriya; Dubey, Shashank Kumar; Islam, Aminul

期刊名称Microsystem Technologies
作者Sinha, Krishnpriya; Dubey, Shashank Kumar; Islam, Aminul
印刷ISSN0946-7076
电子ISSN1432-1858
文件大小2134.34KB
发表时间2019-5-10
DOI10.1007/s00542-019-04466-4

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