发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Liao, Biyan; Zhou, Quanbin; Qin, Jian; Wang, Hong

期刊名称Electronics
作者Liao, Biyan; Zhou, Quanbin; Qin, Jian; Wang, Hong
卷第8卷
期第4期
电子ISSN2079-9292
文件大小3451.70KB
发表时间2019-04-07
DOI10.3390/electronics8040406

← 返回【学霸图书馆】主页