InAs/GaSb superlattice photodetector with cutoff wavelength around 12 μm based on an Al-free nBn structure grown by MOCVD
- 期刊名称Semiconductor Science and Technology
- 作者Hao, Xiujun; Zhao, Yu; Wu, Qihua; Li, Xin; Teng, Yan; Xiong, Min; Huang, Yong; Chen, Baile; Huang, Jian; Deng, Zhuo; Yang, Hui
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小1231.58KB
- 发表时间2019-05-08
- DOI10.1088/1361-6641/ab2006
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