Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memory
- 期刊名称Microelectronic Engineering
- 作者Baek, Gwangho; Yang, Seungmo; Kim, Taeyoon
- 印刷ISSN0167-9317
- 文件大小700.21KB
- 发表时间2019-5
- DOI10.1016/j.mee.2019.110987
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