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Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs

Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs

Chander, S.; Baishya, S.; Kumar, S.; Singh, P.K.; Baral, K.; Tripathy, M.R.; Singh, A.K.; Jit, S.
  • 期刊名称Superlattices and Microstructures
  • 作者Chander, S.; Baishya, S.; Kumar, S.; Singh, P.K.; Baral, K.; Tripathy, M.R.; Singh, A.K.; Jit, S.
  • 印刷ISSN0749-6036
  • 文件大小942.89KB
  • 发表时间2019-5
  • DOI10.1016/j.spmi.2019.05.037
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