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[IEEE 2019 IEEE Radio and Wireless Symposium (RWS) - Orlando, FL, USA (2019.1.20-2019.1.23)] 2019 IEEE Radio and Wireless Symposium (RWS) - A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

[IEEE 2019 IEEE Radio and Wireless Symposium (RWS) - Orlando, FL, USA (2019.1.20-2019.1.23)] 2019 IEEE Radio and Wireless Symposium (RWS) - A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko

作者Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko
文件大小271.25KB
发表时间2019
DOI10.1109/RWS.2019.8714268
页码1-3

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